{"title":"Technique for measuring base-emitter misalignment using split base structure [HBT]","authors":"C. Cismaru, Ching-Hua Li, P. Zampardi","doi":"10.1109/BIPOL.2004.1365738","DOIUrl":null,"url":null,"abstract":"We report an electrical method for measurement of emitter-base misalignment on an InGaP/GaAs hetero-structure bipolar transistor (HBT) technology with nanometer resolution. The method is suitable for in-line process monitoring of emitter-base misalignment and represents a better alternative to more conservative beta-ratio measurements.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365738","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report an electrical method for measurement of emitter-base misalignment on an InGaP/GaAs hetero-structure bipolar transistor (HBT) technology with nanometer resolution. The method is suitable for in-line process monitoring of emitter-base misalignment and represents a better alternative to more conservative beta-ratio measurements.
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