{"title":"Comprehensive Analysis of DG-TFET with Ferro Electric Material","authors":"Yuvraj Kadale, Prabhat Singh, Dharmendra Singh Yadav","doi":"10.1109/ICCMC56507.2023.10083683","DOIUrl":null,"url":null,"abstract":"The most fundamental component of the electronics industries is a transistor which is a semiconductor device. Due to the limitation of SS at 60mv/decade of the MOSFET they were replaced with TFETs. A comprehensive analysis carried out on Double Gate Tunnel Field Effect Transistor (DGTFET) compared with a proposed device Ferro electric material based Double Gate Tunnel Field Effect Transistor (NC-DGTFET). This paper gives a comparative analysis between DGTFET and NC-DGTFET or Ferro Electric DGTFET. To get the optimum subthreshold swing of FETs, Ferro electric materials can efficiently be employed to boost the “ON current” and “Transconductance” of TFETs in the “overdrive zone”. Ferro electric materials are gaining popularity in the semiconductor industry due to their high permittivity and polarization properties.","PeriodicalId":197059,"journal":{"name":"2023 7th International Conference on Computing Methodologies and Communication (ICCMC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th International Conference on Computing Methodologies and Communication (ICCMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCMC56507.2023.10083683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The most fundamental component of the electronics industries is a transistor which is a semiconductor device. Due to the limitation of SS at 60mv/decade of the MOSFET they were replaced with TFETs. A comprehensive analysis carried out on Double Gate Tunnel Field Effect Transistor (DGTFET) compared with a proposed device Ferro electric material based Double Gate Tunnel Field Effect Transistor (NC-DGTFET). This paper gives a comparative analysis between DGTFET and NC-DGTFET or Ferro Electric DGTFET. To get the optimum subthreshold swing of FETs, Ferro electric materials can efficiently be employed to boost the “ON current” and “Transconductance” of TFETs in the “overdrive zone”. Ferro electric materials are gaining popularity in the semiconductor industry due to their high permittivity and polarization properties.
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