{"title":"High-energy electron beam lithography process simulation","authors":"Q. Gan, Zaifa Zhou, Jiang-Yong Pan","doi":"10.1109/3M-NANO.2013.6737408","DOIUrl":null,"url":null,"abstract":"In this paper, we present the model of electron beam lithography. This model includes elastic cross section, inelastic cross section, energy-loss rate model and etch rate model. For elastic cross section, Rutherford cross section and Browning's Mott cross section are adopted. For inelastic cross section, Moller cross section and Gryzinsky cross section are used. To calculate energy-loss rate, we use different forms of Bethe formulas. The etch rate model is used to calculate the etch rate. The simulation is implemented with Monte Carlo method for PMMA resist. Various development profiles are obtained through the simulation.","PeriodicalId":120368,"journal":{"name":"2013 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/3M-NANO.2013.6737408","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this paper, we present the model of electron beam lithography. This model includes elastic cross section, inelastic cross section, energy-loss rate model and etch rate model. For elastic cross section, Rutherford cross section and Browning's Mott cross section are adopted. For inelastic cross section, Moller cross section and Gryzinsky cross section are used. To calculate energy-loss rate, we use different forms of Bethe formulas. The etch rate model is used to calculate the etch rate. The simulation is implemented with Monte Carlo method for PMMA resist. Various development profiles are obtained through the simulation.
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