Exploring Physical Synthesis for Circuits based on Emerging Reconfigurable Nanotechnologies

Andreas Krinke, Shubham Rai, Akash Kumar, J. Lienig
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引用次数: 2

Abstract

Recently proposed ambipolar nanotechnologies allow the development of reconfigurable circuits with low area and power overheads as compared to the conventional CMOS technology. However, using a conventional physical synthesis flow for circuits that include gates based on reconfigurable FETs (RFETs) leads to sub-optimal results. This is due to the fact that the physical synthesis flow for circuits based on RFETs has to cater to the additional gate terminal per RFET transistors. In the present work, we explore three important verticals that lead to an optimized physical synthesis flow for RFET-based circuits with circuit-level reconfigurability: (1) designing optimized layouts of reconfigurable gates, (2) utilize special driver cells to drive the reconfigurable portions of a circuit, and (3) optimized placement of these reconfigurable parts in separate power domains. Experimental evaluations over EPFL benchmarks using our proposed approach show a reduction in chip area of up to 17.5% when compared to conventional flows.
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基于新兴可重构纳米技术的电路物理合成探索
与传统的CMOS技术相比,最近提出的双极性纳米技术允许开发具有低面积和低功耗开销的可重构电路。然而,对于包括基于可重构场效应管(rfet)的门的电路,使用传统的物理合成流程会导致次优结果。这是由于基于RFET的电路的物理合成流必须迎合每个RFET晶体管的附加栅极终端。在目前的工作中,我们探索了三个重要的垂直方向,这些垂直方向导致具有电路级可重构性的基于rfet的电路的优化物理合成流程:(1)设计可重构门的优化布局,(2)利用特殊的驱动单元来驱动电路的可重构部分,以及(3)优化放置这些可重构部分在单独的功率域中。在EPFL基准测试中,使用我们提出的方法进行的实验评估表明,与传统流程相比,芯片面积减少了17.5%。
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