{"title":"A fully integrated low-power class-E power amplifier for short range communication","authors":"Kerim Ture, Enver G. Kilinc, C. Dehollain","doi":"10.1109/MMS.2014.7089007","DOIUrl":null,"url":null,"abstract":"This paper presents the advantages and drawbacks of designing different power amplifier types. The study also compares the drain efficiencies of the current-source and switch-type power amplifiers. The appropriate power amplifier needs to be chosen for low-power short range data communication. A fully integrated low-power class-E power amplifier at 869 MHz for short range communication is designed. The power amplifier is integrated using a 0.18 μm CMOS technology. Post-layout simulation results show the effectiveness of the power amplifier. The power amplifier consumes only 487.2 μW at 0.2 V supply voltage. The drain efficiency of the power amplifier is 55% at -5.8 dBm output power for 50 Ω load.","PeriodicalId":166697,"journal":{"name":"Proceedings of 2014 Mediterranean Microwave Symposium (MMS2014)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 2014 Mediterranean Microwave Symposium (MMS2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MMS.2014.7089007","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents the advantages and drawbacks of designing different power amplifier types. The study also compares the drain efficiencies of the current-source and switch-type power amplifiers. The appropriate power amplifier needs to be chosen for low-power short range data communication. A fully integrated low-power class-E power amplifier at 869 MHz for short range communication is designed. The power amplifier is integrated using a 0.18 μm CMOS technology. Post-layout simulation results show the effectiveness of the power amplifier. The power amplifier consumes only 487.2 μW at 0.2 V supply voltage. The drain efficiency of the power amplifier is 55% at -5.8 dBm output power for 50 Ω load.
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