A multi-valued 350nm CMOS voltage reference

Nuno Lourenço, L. N. Alves, J. L. Cura
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Abstract

This paper describes, a voltage reference source using sub-threshold MOSFETs. The circuit supports supply voltages ranging from 1.5V to 3.3V and temperature variations ranging from -20°C to 80°C. Different values for the voltage reference can be achieved without severe performance impairments. The proposed circuit was produced in the 350nm CMOS process from AMS and occupies less than 0.0335mm2. Simulation and experimental data show that this circuit is able to achieve, a 3mV variation for the entire temperature span and a 2mV variation for the entire supply voltage span.
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多值350nm CMOS电压基准
本文介绍了一种采用亚阈值mosfet的基准电压源。电源电压范围为1.5V ~ 3.3V,温度范围为-20℃~ 80℃。不同的电压参考值可以在不严重影响性能的情况下实现。该电路采用AMS的350nm CMOS工艺生产,占地面积小于0.0335mm2。仿真和实验数据表明,该电路能够在整个温度范围内实现3mV的变化,在整个电源电压范围内实现2mV的变化。
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