A comparative study of thermal performance in two VCSEL structures for high bit rate digital optical links

K. M. Krishna, M. Madhan
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Abstract

Two Vertical Cavity Surface Emitting Laser (VCSEL) diode structures based on InGaAs-GaAs and GaAs-AlGaAs are considered for thermal analysis and their impact on 850 nm digital optical link are investigated. The effect of Multi Mode Fiber (MMF) link length and VCSEL temperature on the overall link performance is compared for both the cases under 1.25 Gb/s transmissions. Bit Error Rate (BER) of 2.02 × 10−5, 1.48 × 10−5 and 2.15 × 10−5, 1.55 × 10−5 for InGaAs-GaAs based VCSEL and GaAs-AlGaAs based VCSEL at 25°C and 40°C are predicted at a fiber length of 1 km. Optimum biasing conditions pertaining to maximum 3 dB bandwidth for both the structures are also determined.
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高比特率数字光链路中两种VCSEL结构热性能的比较研究
研究了两种基于InGaAs-GaAs和GaAs-AlGaAs的垂直腔面发射激光器(VCSEL)二极管结构的热分析,并研究了它们对850 nm数字光链路的影响。在1.25 Gb/s传输条件下,比较了多模光纤(MMF)链路长度和VCSEL温度对链路整体性能的影响。在光纤长度为1 km时,基于InGaAs-GaAs的VCSEL和基于GaAs-AlGaAs的VCSEL在25°C和40°C下的误码率分别为2.02 × 10−5、1.48 × 10−5和2.15 × 10−5、1.55 × 10−5。还确定了两种结构的最大3db带宽的最佳偏置条件。
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