Application of Foil Based Directly Coupled Inductor for Interleaved DC-DC Converter with GaN Transitors

K. Kroičs
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引用次数: 2

Abstract

The paper describes design and application of foil based directly coupled inductor for two phase DC-DC converter with GaN transistors. The main advantages of the interleaved multiphase DC-DC converters over single-phase converters are reduced current stress and reduced output current ripple. Low on state resistances and low switching losses of GaN transistors allows increase current without significant increase in losses but anyway for higher switching frequencies some soft switching techniques and specific magnetics components are needed. The integrated magnetic structure can be used to achieve higher power density. The paper shows that foil based directly coupled inductor can be an option when designing such converter. PSIM software and FEMM simulation software based results are given and experimental tests are provided. It is concluded that directly coupled inductor is worth considered when designing interleaved high frequency converter, further research is needed to introduce best soft switching method for transistors and further optimize magnetics.
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基于箔的直接耦合电感在GaN晶体管交错DC-DC变换器中的应用
本文介绍了一种用于GaN晶体管两相DC-DC变换器的箔基直接耦合电感的设计与应用。与单相变换器相比,交错式多相DC-DC变换器的主要优点是减小了电流应力和输出电流纹波。氮化镓晶体管的低导通电阻和低开关损耗允许在不显著增加损耗的情况下增加电流,但无论如何,对于更高的开关频率,需要一些软开关技术和特定的磁性元件。采用一体化磁性结构可实现更高的功率密度。本文表明,基于箔片的直接耦合电感可以作为设计这种变换器的一种选择。给出了基于PSIM软件和FEMM软件的仿真结果,并进行了实验测试。结果表明,在设计交错高频变换器时,直接耦合电感是值得考虑的,需要进一步研究引入晶体管的最佳软开关方法和进一步优化磁学。
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