{"title":"An EMI suppression MOSFET driver","authors":"H.P. Yee","doi":"10.1109/APEC.1997.581460","DOIUrl":null,"url":null,"abstract":"The MOSFFTs dV/sub drain//dt during turn off is sensed by the EMI suppression driver circuit, which selectively adjust the Vgs transition time at a voltage near the MOSFFT's threshold voltage. This technique controls the dV/sub drain//dt and reduces the EMI noise produced by a hard switching power MOSFET while keep its power loss at a minimum.","PeriodicalId":423659,"journal":{"name":"Proceedings of APEC 97 - Applied Power Electronics Conference","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of APEC 97 - Applied Power Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.1997.581460","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
The MOSFFTs dV/sub drain//dt during turn off is sensed by the EMI suppression driver circuit, which selectively adjust the Vgs transition time at a voltage near the MOSFFT's threshold voltage. This technique controls the dV/sub drain//dt and reduces the EMI noise produced by a hard switching power MOSFET while keep its power loss at a minimum.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
