Li Ming, W. Yue, Fang Xiong, Zhang Leqiang, Wang Zhaoan
{"title":"Active gate control for high power IGBTs with separated gains","authors":"Li Ming, W. Yue, Fang Xiong, Zhang Leqiang, Wang Zhaoan","doi":"10.1109/IPEC.2010.5543859","DOIUrl":null,"url":null,"abstract":"A novel active gate drive method for high power IGBTs is proposed in this paper. It makes use of 2 simple capacitors and several Transient Voltage Suppressors (TVS) to gain different feedback gains in different turn-off transient period, in order to suppress the turn-off over voltage and control turn-off voltage rise slope. Comprehensive study among several application oriented methods is carried out to show its advantages by Saber simulator. With consideration of device safety, an evaluation criterion for active gate drive circuit is proposed.","PeriodicalId":353540,"journal":{"name":"The 2010 International Power Electronics Conference - ECCE ASIA -","volume":"218 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 2010 International Power Electronics Conference - ECCE ASIA -","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPEC.2010.5543859","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A novel active gate drive method for high power IGBTs is proposed in this paper. It makes use of 2 simple capacitors and several Transient Voltage Suppressors (TVS) to gain different feedback gains in different turn-off transient period, in order to suppress the turn-off over voltage and control turn-off voltage rise slope. Comprehensive study among several application oriented methods is carried out to show its advantages by Saber simulator. With consideration of device safety, an evaluation criterion for active gate drive circuit is proposed.
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