{"title":"Soft-switching of IGBTs with the help of MOSFETs in bridge-type converters","authors":"Y. Jiang, G. Hua, E. Yang, F. Lee","doi":"10.1109/PESC.1993.471918","DOIUrl":null,"url":null,"abstract":"For high power switching power converters, IGBTs are more attractive than MOSFETs due to the lower conduction losses and lower cost. However, the slow turn-on and turn-off characteristics, especially the turn-off current tail of the IGBTs, cause severe switching losses, thus limiting the switching frequency. Several bridge-type converters which achieve soft-switching of IGBTs with the help of the fast-switching MOSFETs are proposed. Experimental results have verified the effectiveness of this scheme.<<ETX>>","PeriodicalId":358822,"journal":{"name":"Proceedings of IEEE Power Electronics Specialist Conference - PESC '93","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"42","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Power Electronics Specialist Conference - PESC '93","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1993.471918","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 42
Abstract
For high power switching power converters, IGBTs are more attractive than MOSFETs due to the lower conduction losses and lower cost. However, the slow turn-on and turn-off characteristics, especially the turn-off current tail of the IGBTs, cause severe switching losses, thus limiting the switching frequency. Several bridge-type converters which achieve soft-switching of IGBTs with the help of the fast-switching MOSFETs are proposed. Experimental results have verified the effectiveness of this scheme.<>
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