In Situ Power Loss Estimation of IGBT Power Modules

Qichen Jin, J. K. Mendizábal, N. Miljkovic, A. Banerjee
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Abstract

A fault detection and prediction method of insulated-gate bipolar transistor (IGBT) has been improved over the past decades to reduce system down time. In situ lifetime estimation of IGBT modules has been challenging due to a number of requirements: necessity to operate at high-voltage in the switching environment, measurement precision of the gate-threshold voltage or collector-to-emitter voltage. This paper presents a wear-fatigue estimation framework that consists of collector-to-emitter measurement, power loss calculation and thermal lifetime prediction model. The measurement circuit enables the estimation of power loss across a variety of IGBT modules with minimum impact on system reliability.
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IGBT功率模块的原位功率损耗估计
为了减少系统的停机时间,绝缘栅双极晶体管(IGBT)的故障检测和预测方法在过去几十年中不断得到改进。由于许多要求,IGBT模块的原位寿命估计一直具有挑战性:必须在开关环境中工作在高压下,门阈值电压或集电极到发射极电压的测量精度。本文提出了一个由集热器-发射极测量、功率损耗计算和热寿命预测模型组成的磨损疲劳估计框架。该测量电路能够在对系统可靠性影响最小的情况下估计各种IGBT模块的功率损耗。
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