Mohammad Ahmadi, Jacques Lefebvre, Simon Levasseur, N. Landry, Wei Shi, S. Larochelle
{"title":"Extending on-chip silicon Raman lasers to 2.2 μm","authors":"Mohammad Ahmadi, Jacques Lefebvre, Simon Levasseur, N. Landry, Wei Shi, S. Larochelle","doi":"10.1109/IPC53466.2022.9975519","DOIUrl":null,"url":null,"abstract":"We report the first demonstration of a Raman laser in a sub-micron silicon-on-insulator waveguide operating above 2 μm. Lasing at 2.2 μm is obtained with a 0.7 μW output power. The laser efficiency is limited by the high signal loss.","PeriodicalId":202839,"journal":{"name":"2022 IEEE Photonics Conference (IPC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Photonics Conference (IPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPC53466.2022.9975519","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report the first demonstration of a Raman laser in a sub-micron silicon-on-insulator waveguide operating above 2 μm. Lasing at 2.2 μm is obtained with a 0.7 μW output power. The laser efficiency is limited by the high signal loss.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
