Management of Next-Generation NAND Flash to Achieve Enterprise-Level Endurance and Latency Targets

R. Pletka, Ioannis Koltsidas, Nikolas Ioannou, Sasa Tomic, N. Papandreou, Thomas Parnell, H. Pozidis, Aaron Fry, T. Fisher
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引用次数: 20

Abstract

Despite its widespread use in consumer devices and enterprise storage systems, NAND flash faces a growing number of challenges. While technology advances have helped to increase the storage density and reduce costs, they have also led to reduced endurance and larger block variations, which cannot be compensated solely by stronger ECC or read-retry schemes but have to be addressed holistically. Our goal is to enable low-cost NAND flash in enterprise storage for cost efficiency. We present novel flash-management approaches that reduce write amplification, achieve better wear leveling, and enhance endurance without sacrificing performance. We introduce block calibration, a technique to determine optimal read-threshold voltage levels that minimize error rates, and novel garbage-collection as well as data-placement schemes that alleviate the effects of block health variability and show how these techniques complement one another and thereby achieve enterprise storage requirements. By combining the proposed schemes, we improve endurance by up to 15× compared to the baseline endurance of NAND flash without using a stronger ECC scheme. The flash-management algorithms presented herein were designed and implemented in simulators, hardware test platforms, and eventually in the flash controllers of production enterprise all-flash arrays. Their effectiveness has been validated across thousands of customer deployments since 2015.
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下一代NAND闪存的管理,以实现企业级的持久和延迟目标
尽管NAND闪存在消费设备和企业存储系统中得到了广泛的应用,但它面临着越来越多的挑战。虽然技术进步有助于提高存储密度和降低成本,但它们也导致了耐久性降低和更大的块变化,这不能仅仅通过更强的ECC或读重试方案来补偿,而是必须全面解决。我们的目标是在企业存储中实现低成本的NAND闪存,以提高成本效率。我们提出了新颖的闪存管理方法,可以减少写入放大,实现更好的磨损均衡,并在不牺牲性能的情况下提高耐用性。我们介绍了块校准,这是一种确定最佳读阈值电压水平的技术,可将错误率降至最低,还介绍了新的垃圾收集和数据放置方案,这些方案可减轻块健康变异性的影响,并展示了这些技术如何相互补充,从而实现企业存储需求。通过结合所提出的方案,我们在不使用更强的ECC方案的情况下,将NAND闪存的基线续航时间提高了15倍。本文提出的闪存管理算法在仿真器、硬件测试平台上进行了设计和实现,并最终应用于生产企业全闪存阵列的闪存控制器中。自2015年以来,其有效性已在数千个客户部署中得到验证。
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