M. Sakaguchi, K. Yokota, A. Shiomi, H. Mori, Masanori Watanabe, T. Takagi, K. Hirai, H. Takano, M. Kumagai
{"title":"Electrical properties of S+-implanted GaAs annealed by covering with As-doped a-Si:H films","authors":"M. Sakaguchi, K. Yokota, A. Shiomi, H. Mori, Masanori Watanabe, T. Takagi, K. Hirai, H. Takano, M. Kumagai","doi":"10.1016/B978-0-444-82334-2.50174-X","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ion Beam Modification of Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1016/B978-0-444-82334-2.50174-X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}