Method To Implement Load Network for High-Efficiency Doherty Amplifier for 5G Application

Anil M. Birajdar, A. Deshmane
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Abstract

In this work, a design of a 3-stage power amplifier with the final stage as a Doherty in Ka-band is presented, using the Gallium Arsenide (GaAs) p-HEMT process for 5G application. This amplifier achieves a 24.4 dB of small-signal gain, output power greater than 3W i.e., 34.8 dBm, over 39.2% of peak power added efficiency (PAE) at 1 dB compression, and PAE of 38.6% and 27.5% are obtained at 3 dB, 6 dB back-off respectively in the frequency band of 26.5 - 27.5 GHz.
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5G高效多尔蒂放大器负载网络的实现方法
在这项工作中,提出了一种采用砷化镓(GaAs) p-HEMT工艺的用于5G应用的3级功率放大器的设计,其末级为ka波段的Doherty。该放大器实现了24.4 dB的小信号增益,输出功率大于3W,即34.8 dBm,在1db压缩时的峰值功率附加效率(PAE)超过39.2%,在26.5 - 27.5 GHz频段,3db、6db回退时的峰值功率附加效率分别为38.6%和27.5%。
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