M. Boughariou, M. Fakhfakh, M. Ben Amor, M. Loulou, Y. Cooren, P. Siarry
{"title":"Optimizing a low noise amplifier for UMTS standard through a heuristic","authors":"M. Boughariou, M. Fakhfakh, M. Ben Amor, M. Loulou, Y. Cooren, P. Siarry","doi":"10.1109/ECCSC.2008.4611654","DOIUrl":null,"url":null,"abstract":"This paper presents an approach of optimization to design and to size a low noise amplifier for the UMTS standard, using 0.35 mum CMOS technology. At 2.14 GHz, the LNA exhibits a voltage gain of 14.63 dB, a noise figure of 0.63 dB, and a 1 dB compression point of 0.12 dBm.","PeriodicalId":249205,"journal":{"name":"2008 4th European Conference on Circuits and Systems for Communications","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 4th European Conference on Circuits and Systems for Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCSC.2008.4611654","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This paper presents an approach of optimization to design and to size a low noise amplifier for the UMTS standard, using 0.35 mum CMOS technology. At 2.14 GHz, the LNA exhibits a voltage gain of 14.63 dB, a noise figure of 0.63 dB, and a 1 dB compression point of 0.12 dBm.
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