A low power sub-1 V CMOS voltage reference

2008 IEEE International SOC Conference Pub Date : 2008-10-10 DOI:10.1109/SOCC.2008.4641526

S. Somvanshi, S. Kasavajjala

引用次数: 15

Abstract

This work describes the circuit which generates a stable voltage of 466.5 mV for 1.8 V power supply in 0.18 mum technology. Circuit uses MOSFETs in linear region and in subthreshold region to generate PTAT and CTAT respectively intended to replace resistor and BJT. The temperature coefficient of circuit is 28.4 ppm/degC in the range of -20 to +120degC. The power supply rejection is measured as -30 dB at 8 KHz. Low power consumption of 3.98 muW is an important attribute of this circuit.

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一个低功率低于1v的CMOS电压基准

本文介绍了在0.18 mum技术下，为1.8 V电源产生466.5 mV稳定电压的电路。电路在线性区和亚阈值区分别使用mosfet产生PTAT和CTAT，以取代电阻和BJT。在-20 ~ +120℃范围内，电路温度系数为28.4 ppm/℃。电源抑制在8 KHz时测量为-30 dB。3.98 muW的低功耗是该电路的重要特点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2008 IEEE International SOC Conference

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