A surface micromachined MEMS capacitive microphone with back-plate supporting pillars

C. Je, Jaewoo Lee, Woo-Seok Yang, Jong-Kee Kwon
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引用次数: 6

Abstract

We present a new surface micromachined MEMS capacitive microphone with improved frequency response and high sensitivity. The proposed MEMS microphone has a top back-plate with a bottom sensing membrane and the back-plate is supported by supporting pillars which are anchored to the bottom of the deep back chamber. The back-plate supporting pillars increase the stiffness of the back-plate and prevent deformation. A present surface micromachined MEMS capacitive microphone is fabricated using fully CMOS compatible processes. It has a thin metal membrane of 500 μm diameter, a sensing air gap of 2.5 μm and seven back-plate supporting pillars. A 100 μm deep back chamber is formed by xenon difluoride dry etching of silicon substrate. As a result, the proposed microphone shows a flat frequency response and high open-circuit sensitivity. It shows a measured zero-bias capacitance of 1.0 pF and a pull-in voltage of 11.0 V, and an open-circuit sensitivity of 10.37 mV/Pa on a DC bias of 6.0 V.
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一种带有背板支撑柱的表面微机械MEMS电容式传声器
我们提出了一种新的表面微机械MEMS电容式传声器,它具有改进的频率响应和高灵敏度。所提出的MEMS麦克风具有顶部背板和底部传感膜,背板由锚定在深后腔底部的支撑柱支撑。背板支撑柱增加了背板的刚度,防止变形。采用完全兼容CMOS的工艺制备了一种表面微机械MEMS电容式传声器。它具有直径500 μm的金属薄膜,2.5 μm的传感气隙和7根背板支撑柱。采用二氟化氙对硅衬底进行干法刻蚀,形成了100 μm深的后腔。结果表明,该麦克风具有平坦的频率响应和高的开路灵敏度。在直流偏置6.0 V时,该器件的零偏置电容为1.0 pF,上拉电压为11.0 V,开路灵敏度为10.37 mV/Pa。
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