A Ka-band Vector-Sum Phase Shifter in 65nm CMOS for Phased Array Receivers

Haifeng Liu, Benqing Guo, Huifen Wang, Jingwei Wu
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引用次数: 1

Abstract

In this paper, a Ka-band vector-sum phase shifter with high quadrature precision I/Q signal generator and a new type of digitally controlled variable gain amplifier is presented. Specifically, the parasitic capacitance of the input common source stage of the I/Q signal generator is absorbed by an additional inductor in parallel resonance. In effect, the quadrature precision between the I/Q branch has been improved across the entire Ka-band. A variable gain amplifier based on digital control of transconductance was also proposed, which is equivalent to a cascode structure. The equivalent cascode transistor is composed of a 3x4 transistor array, and the transconductance of the overall circuit is adjustable by turning some of them on or off through programmable digital control signals. The proposed Ka-band vector-sum phase shifter is simulated with the TSMC 65nm CMOS process. It achieves an RMS phase error of 1.7°-2.2° and an RMS magnitude error of 0.9-2.1dB over 27-40GHz while covering a 360° phase range in steps less than 5.625°. The maximum DC power consumption is 8.9mW under 1.2V supply voltage, and the chip area is 0.399mm2.
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一种用于相控阵接收器的65nm CMOS ka波段矢量和移相器
本文介绍了一种具有高正交精度I/Q信号发生器的ka波段矢量和移相器和一种新型的数控变增益放大器。具体来说,I/Q信号发生器输入共源级的寄生电容在并联谐振中被附加电感吸收。实际上,I/Q分支之间的正交精度在整个ka波段都得到了提高。提出了一种基于跨导数字控制的变增益放大器,相当于级联码结构。等效级联晶体管由一个3x4晶体管阵列组成,通过可编程数字控制信号将其中一些晶体管打开或关闭,可以调节整个电路的跨导。采用台积电65nm CMOS工艺对所提出的ka波段矢量和移相器进行了仿真。它在27-40GHz范围内实现了1.7°-2.2°的RMS相位误差和0.9-2.1dB的RMS幅度误差,同时覆盖了360°相位范围,步长小于5.625°。在1.2V供电电压下,最大直流功耗为8.9mW,芯片面积为0.399mm2。
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