P. Brand, Y. Veschetti, V. Sanzone, R. Cabal, X. Pagès, K. Vanormelingen, P. Vermont
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引用次数: 0
Abstract
This work aims at evaluating aluminium oxide (Al2O3) as an emitter passivation layer for Cz-silicon n-type solar cells fabricated with screen-printed metallization. The effect of firing on the emitter saturation current density obtained with Al2O3/SiNx was studied and compared to the one obtained with thermal SiO2/SiNx. An efficiency of 18.3% was achieved using Al2O3 for n-type solar cells, still limited by a low fill factor due to a high contact resistance.
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