Performance analysis of 2 dimensional AIN nMOS transistor with NEGF simulations

Abstract

Recent focus of the VLSI industry has been on performance enhancement of semiconductors by introducing alternate channel materials. In this work, we have studied electronic properties of 2 dimensional hexagonal shaped aluminum nitride (2D h-AIN) as a channel material in n-MOS transistor. With Density Functional Theory (DFT), we have calculated 2D h-AIN to understand it's electronic properties and carried out non-equilibrium Green's function (NEGF) simulations to study device performance. Our studies reveal good MOS device properties in terms of drain current (86.45 (μA/μm), transconductance (296 (iS/jim) and ON/OFF ratio (1.57 × 104), which enhances the scope of further research on 2D h-AIN FET.