Comparative study of Avalanche Photodiode based on manufacturing parameter variations

Abstract

Planar InP/InGaAsP Avalanche Photodiode are important components in the optical communication receiver modules. These devices provide excellent performance for high-speed operations, but their performance is eventually affected by the manufacturing parameter variations considerably. In this paper, an effort has been made to study the effects on theperformance of InP/InGaAsP Avalanche Photodiode due to the variations in the manufacturing parameters. A comparative study of Avalanche Photodiodes with manufacturing parameter variations such as thickness of various layers of photodiode like multiplication layer, absorption layer and carrier layer has been designed, simulated and tested. The results involve verification of device characteristics like breakdown characteristics, gain, spectral response and Quantum efficiency on each of the devices designed. Also, the significance of Anti-reflection coating has been shown in the study.