A Q-band compact amplifier with +22 dB gain, ± 0.5 dB flatness over 40% Fractional Bandwidth in Tower 130 nm CMOS

S. Jameson, N. Buadana, Z. Eliatim, I. Sarousi, A. Wolfman, O. Shaham
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Abstract

This paper proposes an enhanced differential Cascode amplifier topology for mm-wave applications requiring wide-band amplification, flatness and compact integration area. It is here shown how to combine positive and negative feedbacks to improve drastically the stable gain of a Cascode amplifier. In addition with the use of compact 4th order transformers, a 2-stages amplifier with up to 11 dB gain per stage over 40 % fractional bandwidth and above fmax /2 is demonstrated while demonstrating as well one of the smallest core area (0.08 mm2). This topology presents currently a record small signal gain per stage at this technology node (fT/fmax of 87/90 GHz). The presented amplifier topology can be used repetitively and reliably to create wide-band amplifiers with state-of-the-art gain, flatness and return loss over small area. The circuit was realized using Tower's 130 nm CMOS.
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一种q波段紧凑型放大器,增益+22 dB,平坦度±0.5 dB, 40%分数带宽,塔式130纳米CMOS
本文提出了一种增强的差分级联码放大器拓扑结构,适用于需要宽带放大、平坦度和紧凑集成面积的毫米波应用。这里展示了如何将正反馈和负反馈结合起来,以大幅度提高cascade放大器的稳定增益。此外,通过使用紧凑型四阶变压器,演示了一个两级放大器,每级增益高达11 dB,带宽超过40%,高于fmax /2,同时演示了最小的核心面积(0.08 mm2)之一。该拓扑目前在该技术节点上呈现出创纪录的每级小信号增益(fT/fmax为87/90 GHz)。所提出的放大器拓扑结构可以重复可靠地用于创建具有最先进的增益、平坦度和小面积回波损耗的宽带放大器。该电路采用塔的130纳米CMOS实现。
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