{"title":"Optical effect on the buried gate MESFET with time dependent characteristics","authors":"T. Jaya, V. Kannan","doi":"10.1109/RSTSCC.2010.5712824","DOIUrl":null,"url":null,"abstract":"Time - dependent characteristic of buried-gate GaAs MESFET with front illumination have been analyzed by solving continuity equation. This analysis includes the ion implanted buried-gate process. At time ‘t’ is equal to zero, the light through the optical fiber is turning ‘ON’ and ‘OFF’ has been considered. The channel charge and channel current have been evaluated and discussed. Buried-gate optical field effect transistor (OPFET) will be highly suitable for optical communication and optical computing.","PeriodicalId":254761,"journal":{"name":"Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSTSCC.2010.5712824","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Time - dependent characteristic of buried-gate GaAs MESFET with front illumination have been analyzed by solving continuity equation. This analysis includes the ion implanted buried-gate process. At time ‘t’ is equal to zero, the light through the optical fiber is turning ‘ON’ and ‘OFF’ has been considered. The channel charge and channel current have been evaluated and discussed. Buried-gate optical field effect transistor (OPFET) will be highly suitable for optical communication and optical computing.
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