Silicon Zone Sublimation Regrowth

Abstract

Theoretical analysis of mass transfer process at zone sublimation regrowth (ZSR) is performed. An experiment is carried out for the case of silicon. Principal regularities for ZSR process are found: the dependence of the process rate and dopant transfer efficiency on temperature and geometrical parameters as well as radial distribution of their values. It is established that the type of dopant mass transfer regularities is determined by an atom distribution law along their motion during evaporation and reevaporation from the source and the substrate surfaces. Experimental results obtained for As, Ga, Sb atom transfer are in good agreement with the theoretical model for atom distribution according to isotropic law. [Russian Text Ignored]