Analysis and applications of NDR characteristics in single-electron transistor

Abstract

Single Electron Tunneling Transistors (SETs) are promising for very large scale integrated circuits due to their ultra-low power consumption and ultra-small feature size scalability. Devices with NDR characteristics are very useful to be used to design amplifier, oscillation, memory and so on. As a three-port device, NDR characteristics of SET is very useful for VLSI. We analyse several NDR cells based on SETs mostly focused on recently. All the cells use coulomb oscillation to produce NDR characteristics, which can be used to design SRAM, multiple-valued logics, and so on. Therefore, it is very valuable to make research on the NDR characteristics of SETs.