Transmission line model of base spreading resistance at high currents

H. Lin, D. J. Page, J. Ostop
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Abstract

The base resistance of a bipolar transistor at high currents has been analyzed using a transmission-line model and taking the current-crowding effect into account. A closed-form solution has been obtained and shows that the collector current dependency on V/sub B,E/ is proportional to exp(V/sub B,E//2V/sub T/). This ideology factor of 2 for collector current is usually attributed to conductivity modulation at high currents. Analysis shows that the current crowding can also contribute to the nonunity ideology factor. The analysis is in agreement with experimental results.<>
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大电流下基极扩展电阻的传输线模型
采用在线传输模型,考虑了电流拥挤效应,分析了双极晶体管在大电流下的基极电阻。得到了一个封闭解,表明集电极电流对V/下标B,E/的依赖与exp(V/下标B,E//2V/下标T/)成正比。集电极电流的意识形态因子2通常归因于高电流下的电导率调制。分析表明,当前的拥挤也会造成意识形态的不统一因素。分析结果与实验结果一致。
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