ÜÇLÜ KUANTUM TELİNDE ELEKTRİK ALAN VE LAZER ALAN’NIN ELEKTRONİK ÖZELLİKLERE ETKİSİ

Abstract

: Hydrogenic foreign atom binding energy was calculatedun dertheeffect of electric and laser field applied externally to the triple square well wire system. The sensitivity of binding energy to externally applied effects was demonstrated by considering different wire sizes. The triple quantum well structure was created from GaAsand Al x Ga 1-x As semiconductor material. The applied electric field was chosen to be perpendicular to the wire axis and the laser field to be parallel to the wire axis. In calculations, finite difference numerical method was used. As a result of the calculations, it was shown how the electron band energies depend on the applied fields and wire sizes. Theoretical understanding of the electronic properties of such structures is an economical method for developing new technological devices.