SiGe bipolar technology for automotive radar applications

J. Bock, H. Schäfer, K. Aufinger, R. Stengl, S. Boguth, R. Schreiter, M. Rest, Herbert Knapp, M. Wurzer, W. Perndl, T. Bottner, T. Meister
{"title":"SiGe bipolar technology for automotive radar applications","authors":"J. Bock, H. Schäfer, K. Aufinger, R. Stengl, S. Boguth, R. Schreiter, M. Rest, Herbert Knapp, M. Wurzer, W. Perndl, T. Bottner, T. Meister","doi":"10.1109/BIPOL.2004.1365751","DOIUrl":null,"url":null,"abstract":"A SiGe bipolar technology for automotive radar applications around 77 GHz has been developed. A cut-off frequency of 200 GHz, a maximum oscillation frequency of 275 GHz, and a gate delay of 3.5 ps have been obtained. First key building blocks for 77 GHz systems like VCOs and mixers have been realized with this technology.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"173","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365751","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 173

Abstract

A SiGe bipolar technology for automotive radar applications around 77 GHz has been developed. A cut-off frequency of 200 GHz, a maximum oscillation frequency of 275 GHz, and a gate delay of 3.5 ps have been obtained. First key building blocks for 77 GHz systems like VCOs and mixers have been realized with this technology.
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用于汽车雷达的SiGe双极技术
一种用于77 GHz左右汽车雷达应用的SiGe双极技术已经开发出来。截止频率为200 GHz,最大振荡频率为275 GHz,门延迟为3.5 ps。该技术已经实现了77 GHz系统(如vco和混频器)的第一个关键构建模块。
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