{"title":"200GHz fT SiGe HBT load pull characterization at mm-wave frequencies","authors":"L. Boglione, R. T. Webster","doi":"10.1109/RFIC.2010.5477275","DOIUrl":null,"url":null,"abstract":"The load pull measurement of a commercially available SiGe HBT device has been performed at Q band over frequency and bias. Measured mm-wave results for the SiGe process under test have never been made available to the general public before and no comparable information on similar SiGe devices is available in the public domain. The goal of this paper is to begin to fill this gap: load pull results along with a discussion of the characterization setup and procedure are presented.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"601 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477275","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The load pull measurement of a commercially available SiGe HBT device has been performed at Q band over frequency and bias. Measured mm-wave results for the SiGe process under test have never been made available to the general public before and no comparable information on similar SiGe devices is available in the public domain. The goal of this paper is to begin to fill this gap: load pull results along with a discussion of the characterization setup and procedure are presented.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
