T. Yamazaki, Y. Onozawa, M. Otsuki, N. Fujishima, Y. Seki
{"title":"Advanced IGBT chip technology for industrial motor drive applications","authors":"T. Yamazaki, Y. Onozawa, M. Otsuki, N. Fujishima, Y. Seki","doi":"10.1109/IPEC.2010.5543295","DOIUrl":null,"url":null,"abstract":"The latest 6th generation (6G) IGBTs chip technology suitable for industrial motor drive applications is described in this paper. The 6G-IGBTs with micro-P structure provide better turn-on di/dt controllability, lower turn-off oscillation and better Von-Eoff trade-off relationship. By using the 6G-IGBTs with micro-P, the turn-on power dissipation can be reduced compared to the conventional IGBTs with floating p-base under the operating condition to set the same FWD reverse recovery dv/dt. The trade-off relationship between the on-state voltage drop and the turn-off power dissipation has been improved without the turn-off oscillation even in a severe condition. The impact of the micro-P structure on these characteristics has been demonstrated by using 600V and 1200V class IGBTs.","PeriodicalId":353540,"journal":{"name":"The 2010 International Power Electronics Conference - ECCE ASIA -","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 2010 International Power Electronics Conference - ECCE ASIA -","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPEC.2010.5543295","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The latest 6th generation (6G) IGBTs chip technology suitable for industrial motor drive applications is described in this paper. The 6G-IGBTs with micro-P structure provide better turn-on di/dt controllability, lower turn-off oscillation and better Von-Eoff trade-off relationship. By using the 6G-IGBTs with micro-P, the turn-on power dissipation can be reduced compared to the conventional IGBTs with floating p-base under the operating condition to set the same FWD reverse recovery dv/dt. The trade-off relationship between the on-state voltage drop and the turn-off power dissipation has been improved without the turn-off oscillation even in a severe condition. The impact of the micro-P structure on these characteristics has been demonstrated by using 600V and 1200V class IGBTs.
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