Indirect Electrical-Control Through Heating of a GeTe Phase Change Switch and Its Application to Reflexion Type Phase Shifting

Ayoub Naoui, B. Reig, E. Perret, Mohamad El-Chaar, F. Podevin
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Abstract

This paper presents a switch based on GeTe (Germanium-Telluride) phase-change material (PCM) suitable for millimeter-wave applications. A shunt configuration with indirect excitation through heating is proposed to facilitate the implementation process in integrated circuits and to reduce impact on RF signal. Electromagnetic simulations, from 50 GHz up to 70 GHz, of two parallel switches shunted a CPW transmission line (TL) show an overall ON-state resistance (RON) of 3 $\Omega$ with an OFF-state capacitance (COFF) of 7.1 $\mathbf{fF}$. This leads to a high Figure-of-Merit with a cutoff frequency of 7.5 THz. The demonstrated performance is validated through the design of a reflection-type phase shifter (RTPS), where a 3-dB branch-line coupler is loaded with tunable-length lines using those shunt-switches. Simulation results of the RTPS show great precision in terms of phase tunability with an insertion loss (IL) less than 2.7 dB at 60 GHz.
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GeTe相变开关加热间接电控制及其在反射式移相中的应用
本文提出了一种适用于毫米波应用的基于碲化锗相变材料的开关。提出了一种通过加热间接激励的分流配置,以方便集成电路的实施过程,并减少对射频信号的影响。在50 GHz到70 GHz范围内,对两个并联开关在CPW传输线(TL)上进行的电磁模拟显示,总的通状态电阻(RON)为3 $\Omega$,关状态电容(COFF)为7.1 $\mathbf{fF}$。这导致具有7.5太赫兹截止频率的高品质系数。通过设计反射型移相器(RTPS)验证了演示性能,其中3db分支线耦合器使用这些分流开关加载可调长度的线路。仿真结果表明,RTPS在相位可调性方面具有很高的精度,在60 GHz时插入损耗小于2.7 dB。
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