A 60 GHz broadband amplifier in SiGe bipolar technology

W. Perndl, W. Wilhelm, H. Knapp, M. Wurzer, K. Aufinger, T. Meister, J. Bock, W. Simburger, A. Scholtz
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引用次数: 18

Abstract

A broadband amplifier with 16 dB gain and a 3-dB bandwidth of more than 60 GHz is presented. This amplifier exhibits a 1-dB compression point of -9.5 dBm and a third-order intercept point of +2.1 dBm referred to the input. The maximum differential output voltage swing is 1.5 VPP. Clear output eye diagrams have been measured up to 100 Gbit/s. The chip is manufactured in an advanced SiGe bipolar technology and consumes a power of 770 mW at a supply voltage of -5.0 V.
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采用SiGe双极技术的60 GHz宽带放大器
提出了一种16db增益、3db带宽大于60ghz的宽带放大器。该放大器的1 db压缩点为-9.5 dBm,三阶截距点为+2.1 dBm。最大差分输出电压摆幅为1.5 VPP。在高达100gbit /s的速率下测量了清晰的输出眼图。该芯片采用先进的SiGe双极技术制造,在-5.0 V电源电压下功耗为770 mW。
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