Influence of alloy composition on the noise behavior of hetero-FETs in millimeter-wave frequency range

A. Abou-Elnour, K. Schunemann
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Abstract

The noise behavior of millimeter-wave Hetero-FETs is investigated by using a rigorous physical simulator which takes into account non-stationary transport properties and quantization effects to allow better understanding of the origins of the noise fluctuations. The model is applied to determine the effects of Al composition on the 2DEG transport properties and consequently on the noise behavior of Hetero-FETs. The results are compared to those for GaAs MESFETs with 3DEG channel and possibilities to suppress the dominant noise sources at the different frequencies of operation are finally discussed.
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合金成分对毫米波频段异质场效应管噪声特性的影响
采用严格的物理模拟器研究了毫米波异质场效应管的噪声特性,该模拟器考虑了非平稳输运特性和量化效应,以便更好地了解噪声波动的来源。该模型用于确定Al成分对2DEG输运特性的影响,从而影响异质场效应管的噪声行为。结果与具有3DEG通道的GaAs mesfet的结果进行了比较,并讨论了在不同工作频率下抑制主要噪声源的可能性。
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