Crosstalk analysis in large-area low-capacitance InGaAs quad photodiodes

S. Datta, A. Joshi, J. Rue
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引用次数: 3

Abstract

We report crosstalk in 1 mm diameter and 2 mm diameter quad InGaAs photodiodes having quadrant-to-quadrant separation of 15 μm, 20 μm, and 25 μm. This crosstalk is a combination of resistive and capacitive coupling between the photodiode quadrants and varies widely on the combination on device diameter, quadrant-to-quadrant separation, illumination conditions, and modulation frequency. Thus, the position sensing accuracy is heavily influenced by the operating conditions of the quad photodiode.
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大面积低电容InGaAs四极光电二极管串扰分析
我们报道了直径为1mm和2mm的四象限InGaAs光电二极管的串扰,其象限间距分别为15 μm、20 μm和25 μm。这种串扰是光电二极管象限之间的电阻和电容耦合的组合,并且在器件直径、象限到象限的分离、照明条件和调制频率的组合上变化很大。因此,四极光电二极管的工作条件对位置传感精度有很大影响。
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