{"title":"A 6 mW low noise amplifier for 3.1–10.6 GHz UWB application","authors":"Varish Diddi, K. V. Srivastava, A. Biswas","doi":"10.1109/NCC.2011.5734714","DOIUrl":null,"url":null,"abstract":"This paper presents a single stage low-noise amplifier (LNA) using cascode topology for low-power UWB applications. Resistive feedback is used to obtain large bandwidth. The LNA achieves peak gain of 11.8 dB and noise figure varying from1.72 – 3.62 dB within the band of 3.1 – 10.6 GHz. The LNA uses supply of 2 V while consuming only 6 mW of dc power. The technology used for design is 0.25 µm IHP SiGe BiCMOS which employs Heterojunction Bipolar Transistor (HBT). The output 1 dB compression point and input IP3 for LNA are −23 dBm and −12.48 dBm respectively.","PeriodicalId":158295,"journal":{"name":"2011 National Conference on Communications (NCC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 National Conference on Communications (NCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NCC.2011.5734714","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper presents a single stage low-noise amplifier (LNA) using cascode topology for low-power UWB applications. Resistive feedback is used to obtain large bandwidth. The LNA achieves peak gain of 11.8 dB and noise figure varying from1.72 – 3.62 dB within the band of 3.1 – 10.6 GHz. The LNA uses supply of 2 V while consuming only 6 mW of dc power. The technology used for design is 0.25 µm IHP SiGe BiCMOS which employs Heterojunction Bipolar Transistor (HBT). The output 1 dB compression point and input IP3 for LNA are −23 dBm and −12.48 dBm respectively.