Effect of Thermal Aging on the Interface Fracture Toughness of the PCB-UF Interface

P. Lall, Padmanava Choudhury, J. Suhling, J. Williamson
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引用次数: 1

Abstract

Electronics in military applications increasingly rely on the use of commercial off-the-shelf components for enabling critical electrical functions. Defense electronics may often be subjected to high-g acceleration loads in addition to extremes of temperature, humidity and prolonged storage. Underfills are often used to provide protection and survivability expectations under extreme thermos-mechanical loading, CTE mismatches, moisture. There is a dearth of computational tools to allow for the prediction of the initiation of damage and the progression of damage at the underfill-interfaces under high-g shock loads. Defense electronics and military systems have longer lifetimes in the neighborhood of 20-40 years and higher reliability requirements. New packaging architectures, which often push the edge of the envelope in terms of miniaturization, cannot be compared with the prior generation electronic systems and lack decades of historical data to provide robust proof of their survivability. Tools and techniques are needed to determine the failure envelopes for new component technologies for operation under high acceleration loads in current and next generation military systems. In this paper, the interface fracture toughness of the PCB-UF interface has been studied under exposure to high temperature storage. A three-point composite beam specimen has been used to study the interface fracture toughness. The bi-material strips of PCB/Underfill were thermally aged for 10 days, 30 days and 60 days at temperatures ranging from 100°C to 150°C and then the sample specimens were subjected to quasi-static three-point bending to observe fracture parameters and to determine interfacial delamination of bi-material strips. A 2D Digital Image Correlation (DIC) method was also employed to understand the Crack tip opening displacement (CTOD), crack initiation and the fracture toughness, CTOD were compared with the aging schedule and temperature.
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热时效对PCB-UF界面断裂韧性的影响
军事应用中的电子产品越来越依赖于使用商业现成组件来实现关键的电气功能。除了极端的温度、湿度和长时间存储外,国防电子设备还可能经常受到高加速度负载的影响。下填土通常用于在极端热机械载荷、CTE不匹配、潮湿情况下提供保护和生存能力。目前还缺乏计算工具来预测高g冲击载荷下下填土界面损伤的发生和发展。国防电子和军事系统的寿命更长,在20-40年之间,可靠性要求更高。新的封装架构往往在小型化方面达到了极限,无法与上一代电子系统相比,并且缺乏数十年的历史数据来提供其生存能力的有力证明。在当前和下一代军事系统中,需要工具和技术来确定在高加速度载荷下运行的新组件技术的失效包络。本文研究了PCB-UF界面在高温储存条件下的界面断裂韧性。采用三点复合梁试样对界面断裂韧性进行了研究。将PCB/Underfill双材料条在100℃~ 150℃范围内热老化10天、30天、60天,然后对试样进行准静态三点弯曲,观察断裂参数,确定双材料条的界面分层。采用二维数字图像相关(DIC)方法了解了裂纹尖端张开位移(CTOD)、裂纹起裂和断裂韧性,并将CTOD与时效时间和温度进行了比较。
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