B. Das, R. Meshram, V. Ostwal, J. Schulze, U. Ganguly
{"title":"Observation of impact ionization at sub-0.5V and resultant improvement in ideality in I-NPN selector device by Si epitaxy for RRAM applications","authors":"B. Das, R. Meshram, V. Ostwal, J. Schulze, U. Ganguly","doi":"10.1109/DRC.2014.6872336","DOIUrl":null,"url":null,"abstract":"The improvement in ideality is demonstrated by impact ionization at sub-0.5V in silicon despite the higher 1eV band-gap. The NIPIN structure produces high internal field due to the built-in potential (~1eV) of the junctions in addition to Va (cf. a simple pn junction in IMOS) which provides electron sufficient (>bandgap) energy for II. In addition, the dopant profile engineering with i-region to increase scattering length is possibly responsible to effective Impact Ionization at low bias enabling record low bias II (Table 1 that is attractive for advanced memory and logic.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872336","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
The improvement in ideality is demonstrated by impact ionization at sub-0.5V in silicon despite the higher 1eV band-gap. The NIPIN structure produces high internal field due to the built-in potential (~1eV) of the junctions in addition to Va (cf. a simple pn junction in IMOS) which provides electron sufficient (>bandgap) energy for II. In addition, the dopant profile engineering with i-region to increase scattering length is possibly responsible to effective Impact Ionization at low bias enabling record low bias II (Table 1 that is attractive for advanced memory and logic.
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