CuPc film nitrogen dioxide gas sensor based on hole injection

Proceedings. 11th International Symposium on Electrets Pub Date : 2002-12-10 DOI:10.1109/ISE.2002.1043013

T. Wang, Y.D. Jiang, G. Xie, J.H. Xu, Z.M. Wu, C.H. Huang

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Abstract

In this paper a novel type of copper phthalocyanine (CuPc) film nitrogen dioxide (NO/sub 2/) gas sensor based on hole injection was discussed. The sensor structure is Al/sub 2/O/sub 3//ITO/CuPc/Al: ITO (indium-tin-oxide) film prepared by DC magnetron reactive sputtering was used as underside electrode, while CuPc film prepared by vacuum evaporation was used as the sensitive functional layer. The work function of ITO is high and close to the HOMO (highest occupied molecular orbital) energy level of CuPc. When there is an offset voltage between ITO and Al, holes were injected from ITO into CuPc and the holes accumulated at the surface of the CuPc, thus the surface resistivity of CuPc and the resistance of the gas sensor decreases greatly. The preparation method, sensitive mechanism and sensitivity properties were discussed. Compared to the traditional CuPc film NO/sub 2/ gas sensor (Al/sub 2/O/sub 3//Al/CuPc) this kind of sensor has better sensitivity, shorter response and recovery time, better humidity resistivity, and its resistance decreases by 3/spl sim/4 order of magnitude.

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基于孔注的CuPc膜二氧化氮气体传感器

本文讨论了一种基于孔注入的新型酞菁铜膜二氧化氮(NO/sub 2/)气体传感器。传感器结构为Al/sub 2/O/sub 3/ ITO/CuPc/Al:下电极采用直流磁控反应溅射法制备的ITO(铟锡氧化物)薄膜，灵敏功能层采用真空蒸发法制备的CuPc薄膜。ITO的功函数很高，接近CuPc的HOMO(最高占据分子轨道)能级。当ITO与Al之间存在偏置电压时，ITO将空穴注入CuPc，空穴在CuPc表面积聚，使得CuPc的表面电阻率和气体传感器的电阻大大降低。讨论了该材料的制备方法、敏感机理和敏感性能。与传统的CuPc薄膜NO/sub 2/气体传感器(Al/sub 2/O/sub 3//Al/CuPc)相比，该传感器具有更好的灵敏度，更短的响应和恢复时间，更好的湿度电阻率，其电阻降低了3/spl sim/4个数量级。

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Proceedings. 11th International Symposium on Electrets

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