{"title":"InP-based waveguide photodetector with integrated photon multiplication","authors":"D. Pasquariello, J. Piprek, D. Lasaosa, J. Bowers","doi":"10.1117/12.510622","DOIUrl":null,"url":null,"abstract":"We report on novel InP based traveling wave amplification photodetectors exhibiting an external quantum efficiency of more than 100%. Our detectors vertically combine a bulk InGaAs photodetector ridge region with laterally confined InGaAsP quantum wells for amplification. In addition to ultra high responsivities, such detectors have the potential to also achieve high saturation power and high speed. The device physics is discussed using advanced numerical simulation.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"511 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE ITCom","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.510622","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We report on novel InP based traveling wave amplification photodetectors exhibiting an external quantum efficiency of more than 100%. Our detectors vertically combine a bulk InGaAs photodetector ridge region with laterally confined InGaAsP quantum wells for amplification. In addition to ultra high responsivities, such detectors have the potential to also achieve high saturation power and high speed. The device physics is discussed using advanced numerical simulation.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
