Loss analysis of GaN based partial parallel isolated bidirectional full bridge boost converter

Kasper L. J⊘rgensen, Maria C. Mira, Zhe Zhang, M. Andersen
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Abstract

A theoretical loss analysis is presented for GaN switches, for which conduction and switching losses are considered, and for planar transformers, where winding and core losses are considered. The analysis is then used to make a comparison of the losses in the partial parallel isolated full bridge boost converter and the isolated full bridge boost converter.
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氮化镓部分并联隔离双向全桥升压变换器的损耗分析
本文提出了考虑传导和开关损耗的氮化镓开关和考虑绕组和铁芯损耗的平面变压器的理论损耗分析。然后,利用该分析对部分并联隔离式全桥升压变换器和隔离式全桥升压变换器的损耗进行了比较。
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