Simplified analytical model of resonant-tunneling diode

Abstract

Simplified analytical model for analysis of influence of the main parameters of resonant-tunneling diode's (RTD) topology on its static electric characteristics was developed. Analytical relations that relate electric characteristics of RTD with the main design parameters: widths of layers' in active region, chemical compound of layers, doping level of reservoirs, lattice temperature were obtained. The results of modeling were tested for model structures of RTDs with barrier layers formed of AlxGa1−xAs and AlxGa1−xN. The model is free of numerical instabilities and adequately expresses the main tendencies in the dependencies of I–V characteristics' parameters on the topology. It has been formulated such, that the computational resources are used efficiently and allow to trace the impact of all listed parameters on the energy structure of active region, and how those changes affect on the shape of I–V characteristics step-by-step.