Development of Bragg reflection-type x-ray polarimeter based on a bent silicon crystal using hot plastic deformation

Abstract

We are developing a novel Bragg reflection x-ray polarimeter using hot plastic deformation of silicon wafers. A Bragg reflection polarimeter has the advantage of simple principle and large modulation factor but suffers from the disadvantage of a narrow detectable energy band and difficulty to focus an incident beam. We overcome these disadvantages by bending a silicon wafer at high temperature. The bent Bragg reflection polarimeter have a wide energy band using different angles on the wafer and enable focusing. We have succeeded in measuring x-ray polarization with this method for the first time using a sample optic made from a 4-inch silicon (100) wafer.