Amorphous GaN: Optoelectronic properties and device potential

H. Trodahl, B. Ruck, A. Koo, U. Lanke, A. Bittar
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Abstract

This paper describes the preparation of an amorphous form of hetero-polar tetrahedrally bonded GaN by ion-assisted deposition. The structure, including composition and bonding configurations, has been subjected to thorough investigation to establish the optimum deposition conditions. The optoelectronic properties of the best films have been measured to evaluate their potential in UV-blue detectors and/or emitters. Currently the best films have shown clear photoconductivity, with sensitivity peaking in the UV, but no useful luminescence has yet been found.
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非晶氮化镓:光电特性与器件潜力
本文介绍了离子辅助沉积法制备非晶态异极性四面体键合氮化镓的方法。结构,包括组成和键合配置,已经经过彻底的研究,以建立最佳的沉积条件。对最佳薄膜的光电性能进行了测量,以评估其在紫外-蓝探测器和/或发射器中的潜力。目前,最好的薄膜已经显示出清晰的光导性,在紫外线下灵敏度达到峰值,但还没有发现有用的发光。
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