Simulation of Press-Pack IGBT Unit in Phase Change Cooling Materials

Qing Li, Liming Wang, F. Yin
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Abstract

Phase change cooling technology has gradually become a solution to the heat dissipation bottleneck of high-voltage power electronic devices. The research object of this paper is the press-pack IGBT unit. The finite element simulation method is used to simulate the overall heat dissipation of the press-pack IGBT unit when it is placed in the air and immersed in the PCM. Moreover, the junction temperature change of the IGBT chip is analyzed. It is concluded that compared with the chip junction temperature of the press-pack IGBT unit in the air, the chip junction temperature under PCM immersion is much lower and the chip surface temperature is more uniform, which indicates that the phase-change cooling material has a better heat dissipation effect.
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相变冷却材料中压包式IGBT装置的模拟
相变冷却技术已逐渐成为解决高压电力电子器件散热瓶颈的一种方法。本文的研究对象是压装式IGBT装置。采用有限元模拟方法,对压包式IGBT装置置于空气中并浸入PCM时的整体散热进行了模拟。此外,还分析了IGBT芯片的结温变化。结果表明,与空气中压包式IGBT单元的芯片结温相比,PCM浸泡下的芯片结温要低得多,芯片表面温度更加均匀,表明相变冷却材料具有更好的散热效果。
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