Towards Write-Activity-Aware Page Table Management for Non-volatile Main Memories

Tianzheng Wang, Duo Liu, Yi Wang, Z. Shao
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引用次数: 20

Abstract

Non-volatile memories such as phase change memory (PCM) and memristor are being actively studied as an alternative to DRAM-based main memory in embedded systems because of their properties, which include low power consumption and high density. Though PCM is one of the most promising candidates with commercial products available, its adoption has been greatly compromised by limited write endurance. As main memory is one of the most heavily accessed components, it is critical to prolong the lifetime of PCM. In this article, we present write-activity-aware page table management (WAPTM), a simple yet effective page table management scheme for reducing unnecessary writes, by redesigning system software and exploiting write-activity-aware features provided by the hardware. We implemented WAPTM in Google Android based on the ARM architecture and evaluated it with real Android applications. Experimental results show that WAPTM can significantly reduce writes in page tables, proving the feasibility and potential of prolonging the lifetime of PCM-based main memory through reducing writes at the OS level.
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面向非易失性主存的写活动感知页表管理
非易失性存储器,如相变存储器(PCM)和忆阻器,由于其低功耗和高密度的特性,正在积极研究作为嵌入式系统中基于dram的主存储器的替代品。虽然PCM是最有前途的商业产品之一,但由于写入持久性有限,它的采用受到了很大的影响。由于主存是访问量最大的器件之一,因此延长PCM的使用寿命至关重要。在本文中,我们介绍了可感知写活动的页表管理(WAPTM),这是一种简单而有效的页表管理方案,通过重新设计系统软件和利用硬件提供的可感知写活动的特性来减少不必要的写。我们基于ARM架构在Google Android上实现了WAPTM,并在真实的Android应用中进行了评估。实验结果表明,WAPTM可以显著减少页表中的写操作,证明了通过减少操作系统级别的写操作来延长基于pcm的主存生命周期的可行性和潜力。
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