{"title":"A fully integrated 19 pJ/pulse UWB transmitter for biomedical applications implemented in 65 nm CMOS technology","authors":"O. Novák, C. Charles, Richard B. Brown","doi":"10.1109/ICUWB.2011.6058925","DOIUrl":null,"url":null,"abstract":"A fully integrated power-efficient CMOS pulsed ultra-wideband (I-UWB) transmitter for biomedical applications operating in the 3 – 5 GHz band is implemented in a 65 nm CMOS technology. The UWB transmitter adopts a low-complexity ring oscillator-based pulse generator architecture and pulse-position-modulation (PPM) for increased power efficiency and minimal silicon area. The transmitter consumes zero static bias power and achieves an energy efficiency of 19 pJ/pulse at 200 MHz pulse repetition frequency (PRF) while occupying 68 × 68 µm2 of silicon area.","PeriodicalId":143107,"journal":{"name":"2011 IEEE International Conference on Ultra-Wideband (ICUWB)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference on Ultra-Wideband (ICUWB)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICUWB.2011.6058925","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
A fully integrated power-efficient CMOS pulsed ultra-wideband (I-UWB) transmitter for biomedical applications operating in the 3 – 5 GHz band is implemented in a 65 nm CMOS technology. The UWB transmitter adopts a low-complexity ring oscillator-based pulse generator architecture and pulse-position-modulation (PPM) for increased power efficiency and minimal silicon area. The transmitter consumes zero static bias power and achieves an energy efficiency of 19 pJ/pulse at 200 MHz pulse repetition frequency (PRF) while occupying 68 × 68 µm2 of silicon area.