M. Choi, Inhee Lee, Taekwang Jang, D. Blaauw, D. Sylvester
{"title":"A 23pW, 780ppm/°C resistor-less current reference using subthreshold MOSFETs","authors":"M. Choi, Inhee Lee, Taekwang Jang, D. Blaauw, D. Sylvester","doi":"10.1109/ESSCIRC.2014.6942036","DOIUrl":null,"url":null,"abstract":"This paper proposes a MOSFET-only, 20pA, 780ppm/°C current reference that consumes 23pW. The ultra-low power circuit exploits subthreshold-biased MOSFETs and a complementary-to-absolute temperature (CTAT) gate voltage to compensate for temperature dependency. The design shows low supply voltage sensitivity of 0.58%/V and a load sensitivity of 0.25%/V.","PeriodicalId":202377,"journal":{"name":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"46","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2014.6942036","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 46
Abstract
This paper proposes a MOSFET-only, 20pA, 780ppm/°C current reference that consumes 23pW. The ultra-low power circuit exploits subthreshold-biased MOSFETs and a complementary-to-absolute temperature (CTAT) gate voltage to compensate for temperature dependency. The design shows low supply voltage sensitivity of 0.58%/V and a load sensitivity of 0.25%/V.
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