A 60 GHz VCO with 654 MHz direct Frequency Modulation Bandwidth in 0.13-µm SiGe BiCMOS

C. Hoyer, J. Wagner, F. Ellinger
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引用次数: 5

Abstract

A low power 60 GHz voltage-controlled oscillator (VCO) with high frequency modulation bandwidth fabricated in a 0.13-µm SiGe BiCMOS technology is presented. The VCO is designed for two different contexts, one for low-power mobile applications and the other for validating the phase-accurate synchronization of multiple spatially distributed coupled oscillators without a classical hierarchical master-slave clock distribution topology. To ensure quick decay of perturbations in such topologies, the individual oscillators have to respond fast to changes at the input. This is characterized by the direct frequency modulation bandwidth, which measures 654 MHz for the presented VCO. Additionally, a minimum power consumption of 11.3 mW is achieved at a tuning range of 3.78 GHz and a phase noise of -89.01 dBc/Hz at 1 MHz frequency offset.
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基于0.13µm SiGe BiCMOS的60ghz VCO,直接调频带宽为654mhz
提出了一种采用0.13µm SiGe BiCMOS技术制作的低功耗60ghz高调频带宽压控振荡器(VCO)。该VCO设计用于两种不同的环境,一种用于低功耗移动应用,另一种用于验证多个空间分布耦合振荡器的相位精确同步,而无需经典的分层主从时钟分布拓扑。为了确保这种拓扑结构中扰动的快速衰减,单个振荡器必须对输入的变化做出快速响应。其特点是直接调频带宽,测量654mhz的VCO。此外,在3.78 GHz的调谐范围内实现了11.3 mW的最小功耗,在1 MHz频率偏移时实现了-89.01 dBc/Hz的相位噪声。
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